Integrated circuit devices with capacitor and methods of manufacturing the same
作者： Dongkyun Park , Hyongsoo Kim , Mansug Kang , Sangjun Park , Kukhan Yoon
DOI:
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摘要: An integrated circuit device with capacitors and methods of forming the are provided. The may include a first lower capacitor electrode pattern on an inner surface hole in mold layer. have hollow cylindrical shape opening upper surface. method further second plugging be planar. patterns comprise including void. Additionally, removing layer to expose electrode, dielectric
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