作者: S. Yick , Z. J. Han , K. Ostrikov
DOI: 10.1063/1.3657842
关键词:
摘要: A simple and effective method of controlling the growth vertically aligned carbon nanotube arrays in a low-temperature plasma is presented. Ni catalyst was pretreated by immersion ion implantation prior to plasma-enhanced chemical vapor deposition. Both size distribution areal density nanoparticles decrease due ion-surface interactions. Consequently, resulting nanotubes reduced 50 ∼ 100 nm lowered (by factor ten) 108 cm−2, which significantly different from very-high-density forests commonly produced thermal The efficiency this pretreatment compared with existing techniques such as neutral gas annealing etching. These results are highly relevant development next-generation nanoelectronic optoelectronic devices that require control ...