作者:
DOI: 10.1063/1.3702446
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摘要: A photocurrent decay model is presented that addresses the charge trapping and doping mechanisms for composite poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) films having ZnOnanoparticles of different contents. It shown ZnOdoping introduced changes in chemical structure PEDOT:PSS. Dark current proportional to was observed. For n-type Si/ZnO-doped PEDOT:PSS devices, high density originates from efficient hole transport combined long-lifetime electron trapping.