Raman spectra of stoichiometric and defect rutile
作者： Regis J. Betsch , Hong Lee Park , William B. White
DOI: 10.1016/0025-5408(91)90104-T
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摘要: Abstract An explanation for the puzzling high dielectric constant of rutile is sought in a dynamic disordering Ti4+ ion. To test model, Raman spectra were measured on single crystals stoichiometric and reduced TiO2, at temperatures from 4.2 to 400 K. The narrowing lines with temperature interpreted as due an ordering disordered dipole arising off-center titanium atom. Additional broadening present non-stoichiometric randomizing effect oxygen vacancies defect crystal.
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