Dependence of 1 f Noise on Defects Induced in Copper Films by Electron Irradiation

作者: Jonathan Pelz , John Clarke

DOI: 10.1103/PHYSREVLETT.55.738

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摘要: When 500-keV electron irradiation was used to induce defects in polycrystalline copper films maintained at 90 K, the spectral density of $\frac{1}{f}$ noise voltage across increased by as much 1 order magnitude, while resistivity most 10%. were annealed progressively higher temperatures, both and reduced; however, lower annealing fractional reduction added substantially more than that resistivity.

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