The influence of crystallographic orientation on gallium incorporation in HgCdTe grown by metalorganic chemical vapor deposition on GaAs

作者： R. Korenstein , P. Hallock , B. MacLeod , W. Hoke , S. Oguz

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摘要: The influence of the crystallographic orientation on gallium incorporation in HgCdTe films grown GaAs substrates was investigated. It found that growth (111)B results approximately 100 times more than (111)A and (100) falls between other two. can be explained terms chemical reactivity each surface. Chemical reactions back surface metalorganic reagents are believed to source doping.