Imperfections in II–VI semiconductor layers epitaxially grown by organometallic chemical vapour deposition on GaAs
作者： G. Patriarche , R. Triboulet , Y. Marfaing , J. Castaing
DOI: 10.1016/0022-0248(93)90470-H
关键词: Transmission electron microscopy 、 Mineralogy 、 Chemical vapor deposition 、 Semiconductor 、 Secondary ion mass spectrometry 、 Gallium 、 Dislocation 、 Optoelectronics 、 Cadmium telluride photovoltaics 、 Epitaxy 、 Chemistry 、 Inorganic chemistry 、 Materials Chemistry 、 Condensed matter physics
摘要: Abstract II–VI semiconductor heteroepitaxial layers have been grown on (001) GaAs substrates by OMCVD, at temperatures of 365°C. The systems were CdTe/ZnTe/GaAs, where, in some cases, (CdHg)Te was top CdTe. We examined the interfaces transmission electron microscopy (TEM). ZnTe/GaAs interface is abrupt and contains misfit dislocations. On contrary, there no TEM contrast ZnTe/CdTe interface. Threading dislocations can also be observed growm CdTe a remarkably low dislocation density. This due to interdiffusion multilayer process used for their preparation, which consists to, first, deposit alternate HgTe/CdTe (misfit ∼0.3%). initial strained superlittice eliminates X-ray microanalysis secondary ion mass spectrometry detect presence impurities layers. Arsenic gallium found concentrations up few percent semiconductors. Their lattice along
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