Diffusion in CdxHg1-xTe and related materials

摘要: Abstract Improved understanding of solid-state diffusion processes in II–VI compounds is necessary for materials preparation, crystal growth processes, and device fabrication. Self-diffusion studies are fundamental to this understanding, but many experimental have not employed adequate control monitoring the significant process variables. impurity Cd x Hg 1- Te, its parent binary CdTe HgTe discussed available data reviewed detail. It concluded that few ternary alloy capable rigorous theoretical analysis, although some order-of-magnitude estimates rates now available.