Novel kinetic model for diffusion in HgCdTe systems
作者： Yu L Khait
DOI: 10.1088/0268-1242/6/12C/016
关键词:
摘要: A novel semiphenomenological kinetic electron-affected model for diffusion in Hg1-xCdxTe systems is proposed. The suggests mechanisms an explanation of the observed large variations Arrhenius activation energies Delta E and pre-factors D0, linear correlation D0 versus (the compensation effect), differences between diffusions at low high temperatures exponential dependence diffusivity D on x.
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sci-hub.se 参考文章(21)
Jonathan Frankel, Kinetic theory of liquids Clarendon Press. ,(1946)
Yu. L. Khait, A. Silverman, R. Weil, Joan Adler, Large picosecond energy fluctuations of single atoms of a-Si observed in molecular-dynamics studies Physical Review B. ,vol. 44, pp. 8308- 8311 ,(1991) , 10.1103/PHYSREVB.44.8308
M. Brown, A.F.W. Willoughby, Diffusion in CdxHg1-xTe and related materials Journal of Crystal Growth. ,vol. 59, pp. 27- 39 ,(1982) , 10.1016/0022-0248(82)90305-0
Yu. L. Khait, R. Weil, R. Beserman, W. Beyer, H. Wagner, Kinetic model for desorption of hydrogen from amorphous hydrogenated silicon. Physical Review B. ,vol. 42, pp. 9000- 9008 ,(1990) , 10.1103/PHYSREVB.42.9000
Yu. L. Khait, R. Beserman, Kinetic many-body model of recrystallization of pure and doped amorphous silicon. Physical Review B. ,vol. 33, pp. 2983- 2986 ,(1986) , 10.1103/PHYSREVB.33.2983
Mei‐Fan S. Tang, David A. Stevenson, Interdiffusion behavior of HgTe‐CdTe junctions Applied Physics Letters. ,vol. 50, pp. 1272- 1274 ,(1987) , 10.1063/1.97881
Yu. L. Khait, J. Salzman, R. Beserman, Kinetic model for gradual degradation in semiconductor lasers and light-emitting diodes Applied Physics Letters. ,vol. 53, pp. 2135- 2137 ,(1988) , 10.1063/1.100297
Y Khait, Kinetic many-body theory of short-lived large energy fluctuations of small numbers of particles in solids and its applications Physics Reports. ,vol. 99, pp. 237- 340 ,(1983) , 10.1016/0370-1573(83)90064-9
V. Richter, R. Kalish, Evolution of point to extended defects in low‐temperature implanted Hg0.76Cd0.24Te Journal of Applied Physics. ,vol. 67, pp. 6578- 6580 ,(1990) , 10.1063/1.345089
D. L. Smith, T. C. McGill, J. N. Schulman, Advantages of the HgTe‐CdTe superlattice as an infrared detector material Applied Physics Letters. ,vol. 43, pp. 180- 182 ,(1983) , 10.1063/1.94272