Growth interface of CdMnTe crystal by traveling heater method
作者： Wen-qi WU , Ji-jun ZHANG , Lin-jun WANG , Jia-hua MIN , Xu-liang WEN
DOI: 10.1016/S1003-6326(16)64248-6
关键词:
摘要: Abstract The growth interfaces of CdMnTe (CMT) crystals grown by traveling heater method (THM) were studied. Two types polycrystalline CMT feed ingots synthesized in a traditional rocking furnace and vertical Bridgman (VB) adopted THM growth, the effects on interface revealed. morphology crystal (CMT2) from was smoother with lower curvature compared that (CMT1) furnace. radial Mn composition Te inclusion distribution wafers analyzed correlated to interface. segregation along direction density CMT2 than those CMT1. VB could improve morphology, which is beneficial for decreasing inclusions wafers.
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