摘要: Silicon-based heterostructures have come a long way from the discovery of strain as a new and essential parameter for band structure engineering to the present state of electron and …
harvard.edu
sci-hub.se 参考文章(163)
R. Hull, J. C. Bean, L. J. Peticolas, D. Bahnck, B. E. Weir, L. C. Feldman, Quantitative analysis of strain relaxation in GexSi1−x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1−x alloys Applied Physics Letters. ,vol. 61, pp. 2802- 2804 ,(1992) , 10.1063/1.108068
T. Ando, Valley splitting in the silicon inversion layer: Misorientation effects Physical Review B. ,vol. 19, pp. 3089- 3095 ,(1979) , 10.1103/PHYSREVB.19.3089
J C Brighten, I D Hawkins, A R Peaker, R A Kubiak, E H C Parker, T E Whall, The determination of valence band discontinuities and interface charge densities in Si/Si1-yGey/Si heterojunctions Semiconductor Science and Technology. ,vol. 8, pp. 1487- 1489 ,(1993) , 10.1088/0268-1242/8/7/048
S. Q. Murphy, Z. Schlesinger, S. F. Nelson, J. O. Chu, B. S. Meyerson, Electron cyclotron resonance in silicon/silicon germanium heterostructures Applied Physics Letters. ,vol. 63, pp. 222- 224 ,(1993) , 10.1063/1.110347
R. People, J. C. Bean, D. V. Lang, Modulation doping in Ge(x)Si(1-x)/Si strained layer heterostructures: Effects of alloy layer thickness, doping setback, and cladding layer dopant concentration Journal of Vacuum Science and Technology. ,vol. 3, pp. 846- 850 ,(1985) , 10.1116/1.573328
T.E. Whall, Two-dimensional hole gas in SiGe heterostructures : electrical properties and field effect applications Journal of Crystal Growth. ,vol. 157, pp. 353- 361 ,(1995) , 10.1016/0022-0248(95)00413-0
Anders Sørensen, Klaus Mølmer, QUANTUM COMPUTATION WITH IONS IN THERMAL MOTION Physical Review Letters. ,vol. 82, pp. 1971- 1974 ,(1999) , 10.1103/PHYSREVLETT.82.1971
M. Arafa, P. Fay, K. Ismail, J.O. Chu, B.S. Meyerson, I. Adesida, High speed p-type SiGe modulation-doped field-effect transistors IEEE Electron Device Letters. ,vol. 17, pp. 124- 126 ,(1996) , 10.1109/55.485188
J Matthews, Defects in epitaxial multilayers I. Misfit dislocations Journal of Crystal Growth. ,vol. 27, pp. 118- 125 ,(1974) , 10.1016/0022-0248(74)90424-2
N. Usami, S. Fukatsu, Y. Shiraki, Abrupt compositional transition in luminescent Si1−xGex/Si quantum well structures fabricated by segregant assisted growth using Sb adlayer Applied Physics Letters. ,vol. 63, pp. 388- 390 ,(1993) , 10.1063/1.110052