Silicon–germanium (SiGe)-based field effect transistors (FET) and complementary metal oxide semiconductor (CMOS) technologies
作者： S. Takagi
DOI: 10.1533/9780857091420.4.499
关键词:
摘要: Abstract: This chapter reviews the recent results of work on silicon–germanium (SiGe) channel metal oxide semiconductor field effect transistors (MOSFETs), which are one most important electronic devices using SiGe alloys, as advanced complementary (CMOS) devices. After describing importance high mobility channels, experimental and critical issues p-channel n-channel MOSFETs bulk Si substrates introduced. Next, SiGe-based MOS with immunity against short effects channels to they applied described.
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