Growth and transport properties of complementary germanium nanowire field-effect transistors
作者： Andrew B. Greytak , Lincoln J. Lauhon , Mark S. Gudiksen , Charles M. Lieber
DOI: 10.1063/1.1755846
关键词: Nanotechnology 、 Doping 、 Chemical vapor deposition 、 Dopant 、 Vapor–liquid–solid method 、 Optoelectronics 、 Nanowire 、 Materials science 、 Germanium 、 Epitaxy 、 Field-effect transistor
摘要: … type Ge nanowires and the fabrication of Ge nanowire p- and n-FETs. Previously, Ge nanowires … phase Ge is provided by laser ablation,8 physical vapor transport,9,10 or by a molecular …
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