Effect of ultrahigh nucleation density on diamond growth at different growth rates and temperatures

摘要: A nucleation density in the range 108–1011 cm−2 is used for diamond film deposition on Si substrates. Diamond films, prepared by hot filament and microwave plasma chemical vapor with rate temperature ranges of 0.05–2.5 μm per hour 470–950 °C, respectively, were characterized atomic force microscopy, scanning electron Raman spectroscopy. The surface roughness was studied as a function time, thickness, grain size, density. Films 1 thick obtained mean 30 nm. It found that strongly dependent at early stage deposition.