Design and analysis of heterojunction bipolar transferred electron devices
作者： J.K. Twynam , M. Yagura , N. Takahashi , E. Suematsu , K. Sakuno
DOI: 10.1109/16.936504
关键词:
摘要: The design of the heterojunction bipolar transferred electron device (HBTED) is considered. MOCVD-grown AlGaAs/GaAs HBTEDs were fabricated and 60 GHz operation was confirmed by on-wafer measurements. Analysis aided use Monte Carlo simulations, equivalent circuit model simulations two-dimensional (2-D) drift-diffusion simulation results are compared with measurements on HBTED test structures. effects external base-collector region current spreading in collector investigated latter found to be great importance. Our show that having an appropriately graded doping profile can compensate this hypothesis supported measurement results. Conclusions drawn regarding practical for mm-wave oscillator applications.
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