摘要: A nonlinear lumped circuit model for Gunn diodes which includes the effects due to domain extinction and nucleation phenomena is presented. The based upon physical principles allows an arbitrary drift velocity curve v(E) a diffusion D(E) be specified by user. It valid simulating Gunn-diode circuits operating in any matured high-field mode, or LSA mode. Under additional assumptions, simplifies other existing models. Several computer-simulated examples of under both steady-state transient regimes are Finally, rigorous definition ‘DC’ I-V offered shown rather useful predicting qualitative behaviour during all time intervals where exists.