A new bulk negative differential conductance mechanism with multiple steady states
作者： Y Ohno
DOI: 10.1088/0268-1242/9/5S/058
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摘要: Utilizing a high electron-electron scattering rate assumption, new type of bulk negative differential conductance is predicted from hydrodynamic Boltzmann transport equations. N-type appears in two-valley semiconductors, which the upper valley has higher density states and saturation drift velocities have relation VSAT(LOWER)>VSAT(UPPER). In selecting low-field mobility values for both valleys, Vd-E curves show sharp peak or even loop near with triple steady an electric field. The peculiar are attributed to extraordinarily appearing around onset carrier population inversion lower valley. velocity emerges because efficient heat removal upper-valley carriers through lower-valley carriers.
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