Optical and electronic structure of quasi-freestanding multilayer graphene on the carbon face of SiC
作者： Iman Santoso , Swee Liang Wong , Xinmao Yin , Pranjal Kumar Gogoi , Teguh Citra Asmara
DOI: 10.1209/0295-5075/108/37009
关键词:
摘要: We report the optical and electronic properties of multilayer graphene films grown epitaxially on carbon face (C-face) 4H-SiC probed using spectroscopic ellipsometry (SE) angle-resolved photoemission spectroscopy (ARPES). The conductivity in energy range from 1.0 to 5.3 eV extracted SE reveals two important features: presence universal at near-infrared region asymmetric resonant excitons 4.5 eV. Furthermore, ARPES shows independent linear dispersion. These features resemble quasi-freestanding C-face SiC.
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