Electron-hole pair excitation in semiconductors via energy transfer from an external sensitizer

摘要: We consider the creation of electron-hole pairs in a semiconductor by energy transfer from an excited molecule near surface. Direct and indirect band-gap semiconductors are treated explicitly. At large sensitizer-semiconductor separations d, our results agreement with previous dielectric continuum limit. small we find deviations valid large-distance For near-band-edge to direct-gap semiconduc- tors rate does not follow 1/${d}^{3}$ dependence as d becomes small. indirect-gap materials that at separations, transitions may occur without phonon assistance.