Effect of different preparation conditions on light emission from silicon implanted SiO2 layers
作者： G. Ghislotti , B. Nielsen , P. Asoka‐Kumar , K. G. Lynn , A. Gambhir
DOI: 10.1063/1.362490
关键词:
摘要: Visible light emission from Si+ implanted SiO2 layers as a function of different annealing conditions (temperature, time and ambient) is studied. It shown that 560 nm band, present in samples, increases its intensity for increasing temperatures still observed after at 1000 °C. The fast (0.5–2 ns). A second band centered 780 detected the further when hydrogen was performed. long (1μs–0.3 ms). Based on behavior times, origin two bands discussed.
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