Silicon roughness induced by plasma etching

摘要: A parametric study of single‐crystal silicon roughness induced by an SF6 plasma has been carried out means atomic force microscopy. An helicon source (also called resonant inductive etcher) used to the relation between parameters and subsequent surface damage. The damage examined in terms height analysis spatial (lateral) extent roughness. central result is that scales with ratio ion flux over reactive neutral (J+/JF), showing combined role both ionic species. At low flux, neutrals smooth surface, while at higher they propagate ion‐induced defects, allowing be enhanced. Influences other such as exposure duration, energy, or substrate temperature have also quantified. It shown growth well described empirical law: rms∝(1/√E)(J+/JF)ηtβ, η≊0.45 β≊1 (rms root mean square roughness). In respects, we analyze data a Fourier transform analysis. main advantage minimize noise separate magnitude roughness, lateral correlation length on which growing, behavior short long range results are identical rms analysis, especially, above scaling law. time evolution follows law (which not accessible rms) leading fractal dimension 2.67. Also observed variation function bias voltage. Consequence for further down integrated circuits mind.