Dislocation generation in silicon during CMOS device processing

摘要: Dislocation generation in silicon at ion implants complementary metal oxide semiconductor (CMOS) devices has been studied by using transmission X-ray topography. The dislocations are shown to arise through the interaction between relatively low level thermomechanical stresses and implantation damage during processing. These observations compared with more common situation of dislocation via purely effects. results provide an illustration importance interactions various sources stress which occur device Furthermore, they demonstrate that substantial defect can even when such controlled levels individually below threshold for generation.