Confined optical modes in short period (110) Si/Ge superlattices
作者： E. Friess , H. Brugger , K. Eberl , G. Krötz , G. Abstreiter
DOI: 10.1016/0038-1098(89)90929-0
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摘要: Abstract Raman spectroscopy is used to study the optical phonon properties of Si/Ge strained layer superlattices grown on (110) Ge buffers. Built in biaxial strain leads an energetic shift and splitting two TO branches. Narrow layered structures give rise formation confined modes which are observed up third order.
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