Improved optical absorption, enhanced morphological and electrochemical properties of pulsed laser deposited binary zinc and vanadium oxide thin films
作者： Cyril Robinson Azariah John Chelliah , Rajesh Swaminathan
DOI: 10.1007/S10854-019-02548-7
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摘要: The investigations were carried out on binary metal oxide ZnO/V2O5 nanostructured thin films prepared by pulsed laser deposition for the MOSFET channel application. at 298 (as deposited), 623, 773, and 923 K 10 Hz repetition rate (LRR) 30 min. characterized SEM, EDAX, XRD, UV–Visible spectroscopy, IV measurements. amorphous nature of film deposited below 773 K was revealed XRD analysis. Few diffraction peaks seen in sample, revealing formation Zn2V2O7 Zn3V3O8 ZVO films. All samples are partially or completely till 923 K. optical energy bandgap measured using Tauc plot it found to be 3.1–3.7 eV Then, investigated impedance modulus spectroscopy over a frequency range 1 Hz–1 MHz temperatures lying 298–473 K domain. response imaginary (Z″) shows relaxation behavior each measuring temperature all three samples. However, four fabricated, namely, oxides high show semiconducting behavior. activation (Ea) determined from Arrhenius based relaxation. is minimal high-temperature PLD
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