In Situ Studies on Reaction Mechanisms in Atomic Layer Deposition

作者: Kjell Knapas , Mikko Ritala

DOI: 10.1080/10408436.2012.693460

关键词:

摘要: During the past decade, atomic layer deposition (ALD) has become an important thin-film method in microelectronics industry, and it also gained a lot of interest many other areas, such as nanotechnology. The success ALD is built on proper surface reactions. In this paper, situ reaction mechanism studies processes are reviewed with aim building general understanding similarities differences exhibited by various process groups. Also, levels mechanisms discussed. main methods used to study chemistry under typical conditions quadrupole mass spectrometry (QMS), quartz crystal microbalance (QCM), infrared (IR) spectrometry. These presented detail review. Various optical methods, ellipsometry particular, have been too, but they provide little information about mechanisms. Competent investigations solve rea...

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