Preparation of Al 2 O 3 Thin Films by Atomic Layer Deposition Using Dimethylaluminum Isopropoxide and Water and Their Reaction Mechanisms

摘要: Al 2 O 3 thin films were grown on H-terminated Si(001) substrates using dimethylaluminum isopropoxide [DMAI: (CH ) AlOCH(CH ], as a new precursor, and water by atomic layer deposition (ALD). The self-limiting ALD process alternate surface reactions of DMAI H was confirmed from measured thicknesses the aluminum oxide functions pulse time number DMAI-H cycles. Under optimal reaction conditions, growth rate ∼1.06 A per cycle achieved at substrate temperature 150 °C. From mass spectrometric study DMAI-D process, it determined that overall binary for [2 + → 4 CH HOCH(CH ] can be separated into following two half-reactions: (A) AIO * AlO C H(CH Al-O - Al(O ]* ∩ (B) Al[O HO where asterisks designate species. Growth stoichiometric with carbon incorporation less than 1.5 % depth profiling Auger electron spectroscopy. Atomic force microscopy images show atomically flat uniform surfaces. X-ray photoelectron spectroscopy cross-sectional high resolution transmission an film indicate there is no distinguishable interfacial Si except very silicate may have been formed between substrate. C-V measurements showed capacitance values comparable to previously reported values.