High performance field effect transistors comprising carbon nanotubes fabricated using solution based processing
作者： Ji-Ung Lee , Walter Vladimir Cicha , Yun Li , Patrick Roland Lucien Malenfant
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摘要: The present invention is directed toward field effect transistors (FETs) and thin film (TFTs) comprising carbon nanotubes (CNTs) to methods of making such devices using solution-based processing techniques, wherein the CNTs within have been fractionated so as be concentrated in semiconducting CNTs. Additionally, relatively low-temperature achievable with permit use plastics fabricated devices.
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