Reduced mask chalcogenide memory
作者： Alan R. Reinberg , Russell C. Zahorik
DOI:
关键词:
摘要: A method for fabricating chalcogenide memories in which ultra-small pores are formed insulative layers using disposable spacers. The memory elements positioned within the pores. thus defined have minimum lateral dimensions ranging from approximately 500 to 4000 Angstroms.
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