Phase change memory devices with reduced programming current
作者： Shyhyeu Wang , Wei-Hsiang Wang , Hui-Fang Tsai , Denny Duan-Lee Tang , Wen-Chin Lin
DOI:
关键词: Half-cell 、 Electrical engineering 、 Heat sink 、 Materials science 、 Optoelectronics 、 Electrical resistivity and conductivity 、 Phase-change material 、 Phase-change memory 、 Current (fluid) 、 Layer (electronics) 、 Electrode
摘要: A phase change memory device and a method of forming the same are provided. The includes conducting electrode in dielectric layer, bottom over electrode, layer top layer. may further include heat sink between electrode. resistivities preferably greater than resistivity material crystalline state.
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