Phase changeable memory cells
作者： Jihye Yi , Hyunjo Kim , Yongho Ha
DOI:
关键词: Optoelectronics 、 Contact area 、 Electrode 、 Materials science 、 Phase (waves) 、 Power consumption 、 Memory cell 、 Edge (geometry) 、 Electronic engineering
摘要: A phase changeable memory cell is disclosed. According to embodiments of the invention, a formed that has reduced contact area with one electrodes, compared previously known cells. This can be sidewall or perimeter edge opening through electrode. Thus, when thickness electrode relatively thin, between and material pattern very small. As result, it possible reduce power consumption device form reliable compact
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