Phase change memory cells having vertical channel access transistor and memory plane

摘要: Memory devices are described along with methods for manufacturing. A memory device as herein comprises a plurality of word lines overlying bit lines, and field effect transistors. Field transistors in the first terminal electrically coupled to corresponding line second terminal, channel region separating terminals adjacent lines. The acts gate transistor. dielectric separates from region. plane programmable resistance material respective transistors, conductive on common voltage.