Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation

摘要: A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the substrate, each having stack structure of variable element and an access element, such off-state value in certain voltage range that is ten times or more as high select state; read/write circuit on substrate underlying array, wherein comprises recording layer first composite compound expressed by x M y O z (where “A” “M” are cation elements different from other; “O” oxygen; 0.5≦x≦1.5, 0.5≦y≦2.5 1.5≦z≦4.5) second containing transition cavity site for housing ion.