Vertical side wall active pin structures in a phase change memory and manufacturing methods
作者： Hsiang-Lan Lung
DOI:
关键词:
摘要: A programmable resistor memory, such as a phase change with memory element comprising narrow vertical side wall active pins is described. The comprise resistive material, material. In first aspect of the invention, method forming cell described which comprises stack electrode having principal surface perimeter, an insulating layer overlying portion electrode, and second vertically separated from layer. Side walls on are positioned over principle lateral offset perimeter electrode.
lens.org 参考文章(111)
Bomy Chen, Memory device and method of operating same ,(2003)
Stephen J. Hudgens, Tyler Lowrey, Patrick J. Klersy, Electrically programmable memory element with multi-regioned contact ,(2000)
Louis L. C. Hsu, Jeremy K. Stephens, Chandrasekhar Narayan, Michael Wise, Larry Clevenger, Fuse processing using dielectric planarization pillars ,(2000)
Yoon-ho Son, Suk-Hun Choi, Chang-ki Hong, Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by same ,(2005)
William John Saiki, Sakhawat M. Khan, Hieu Van Tran, High voltage generation and regulation system for digital multilevel nonvolatile memory ,(2004)
Chin-Yi Huang, Samuel C. Pan, Yun Chang, Huei Huarng Chen, Method of making nonvolatile memory devices having reduced resistance diffusion regions ,(1999)
Charles H. Dennison, Phase change memory device on a planar composite layer ,(2002)
Jihye Yi, Hyunjo Kim, Yongho Ha, Phase changeable memory cells ,(2003)
Bomy Chen, Memory device with discrete layers of phase change memory material ,(2003)