Superhard nanocrystalline silicon carbide films
作者： Feng Liao , S. L. Girshick , W. M. Mook , W. W. Gerberich , M. R. Zachariah
DOI: 10.1063/1.1920434
关键词:
摘要: Nanocrystalline silicon carbide films were deposited by thermal plasma chemical vapor deposition, with film growth rates on the order of 10μm∕min. Films molybdenum substrates, substrate temperature ranging from 750-1250 °C. The are composed primarily β-SiC nanocrystallites. Film mechanical properties investigated nanoindentation. As increased average grain size, crystalline fraction in film, and hardness all increased. For temperatures above 1200 °C size equaled 10-20 nm, 80-85 %, approximately 50 GPa.
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