Epitaxial growing apparatus

作者: Taizan Goto , Kotei Iwata , Yoshizo Komiyama , Yoshihiko Miyazaki

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摘要: An epitaxial growing apparatus comprises a base plate, quartz bell jar mounted on the and reaction chamber defined by plate jar, in which an thin film layer of semiconductor substance is formed substrate support member. A metal disposed outside so as to surround plurality engaging members are operatively connected for detachably with jar.

参考文章(5)
Hitoshi Ebata, Shigetugu Matunaga, Semiconductor vapor phase growing apparatus ,(1983)
Ishikawa Taketoshi, Komiyama Kichizou, Miyazaki Yoshihiko, Iwata Koutei, VAPOR PHASE GROWING APPARATUS FOR SEMICONDUCTOR ,(1982)
Bryant A. Campbell, Nicholas E. Miller, Dale R. Dubois, Ralph F. Manriquez, Chemical vapor deposition apparatus ,(1984)
Iwata Koutei, Komiyama Kichizou, Matsunaga Jiyuuji, Miyazaki Yoshihiko, SEMICONDUCTOR VAPOR GROWTH DEVICE ,(1983)