Epitaxial reactor having a wall which is protected from deposits

摘要: An epitaxial growth reactor for processing wafers (1) of a semiconductor material by exposing it to reactive gas flow. A wall (8) positioned at slight distance from the wafer or group which is exposed in double wall, with very narrow space (34) between two walls, and this filled mixture whose composition can be varied and, consequently, thermal conductivity adjusted. The used hydrogen/argon mixture, proportion each these gasses being adjustable. interior quartz plate exterior (9) made metal. Relevant FIG.: 1.