The 1/f Noise Analysis of 3D SONOS Multi Layer Flash Memory Devices Fabricated on Nitride or Oxide Layer
作者： Sang-Youl Lee , Jae-Sub Oh , Seung-Dong Yang , Kwang-Seok Jeong , Ho-Jin Yun
DOI: 10.4313/JKEM.2012.25.2.85
关键词:
摘要: In this paper, we compared and analyzed 3D silicon-oxide-nitride-oxide-silicon (SONOS) multi layer flash memory devices fabricated on nitride or oxide layer, respectively. The device has inferior electrical properties than that layer. However, the faster program / erase speed (P/E speed) although having performance. Afterwards, to find out reason why P/E speed, 1/f noise analysis of both is investigated. From gate bias dependance, follow mobility fluctuation model which results from lattice scattering defects in channel addition, with better characteristics higher normalized drain current power spectral density (>), means it more traps apparent hooge`s parameter () represent grain boundary trap height potential barrier considered. values, can be explained due traps. Therefore, have a different trapping/de-trapping free carriers into sites
koreascience.or.kr参考文章(10)
Longqing Chen, Jianmin Miao, Lihui Guo, Rongming Lin, Control of stress in highly doped polysilicon multi-layer diaphragm structure Surface & Coatings Technology. ,vol. 141, pp. 96- 102 ,(2001) , 10.1016/S0257-8972(01)01163-X
A. Mercha, L. K. J. Vandamme, L. Pichon, R. Carin, O. Bonnaud, Current crowding and 1/f noise in polycrystalline silicon thin film transistors Journal of Applied Physics. ,vol. 90, pp. 4019- 4026 ,(2001) , 10.1063/1.1404418
Jiankang Bu, Marvin H White, Design considerations in scaled SONOS nonvolatile memory devices Solid-state Electronics. ,vol. 45, pp. 113- 120 ,(2001) , 10.1016/S0038-1101(00)00232-X
Sung-Ho Bae, Jeong-Hyun Lee, Hyuck-In Kwon, Jung-Ryul Ahn, Jae-Chul Om, Chan Hyeong Park, Jong-Ho Lee, The $\hbox{1}/f$ Noise and Random Telegraph Noise Characteristics in Floating-Gate nand Flash Memories IEEE Transactions on Electron Devices. ,vol. 56, pp. 1624- 1630 ,(2009) , 10.1109/TED.2009.2022700
L.K.J. Vandamme, R.G.M. Penning de Vries, Correlation between most 1/f noise and CCD transfer inefficiency Solid-state Electronics. ,vol. 28, pp. 1049- 1056 ,(1985) , 10.1016/0038-1101(85)90038-3
P. Magnone, F. Crupi, G. Giusi, C. Pace, E. Simoen, C. Claeys, L. Pantisano, D. Maji, V.R. Rao, P. Srinivasan, $1/f$ Noise in Drain and Gate Current of MOSFETs With High- $k$ Gate Stacks IEEE Transactions on Device and Materials Reliability. ,vol. 9, pp. 180- 189 ,(2009) , 10.1109/TDMR.2009.2020406
S. Jeon, J.H. Han, J.H. Lee, S. Choi, H. Hwang, C. Kim, High work-function metal gate and high-/spl kappa/ dielectrics for charge trap flash memory device applications IEEE Transactions on Electron Devices. ,vol. 52, pp. 2654- 2659 ,(2005) , 10.1109/TED.2005.859691
K.K. Hung, P.K. Ko, C. Hu, Y.C. Cheng, A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors IEEE Transactions on Electron Devices. ,vol. 37, pp. 654- 665 ,(1990) , 10.1109/16.47770
Y Sun, H Y Yu, N Singh, N S Shen, G Q Lo, D L Kwong, Multibit Programmable Flash Memory Realized on Vertical Si Nanowire Channel IEEE Electron Device Letters. ,vol. 31, pp. 390- 392 ,(2010) , 10.1109/LED.2010.2041745
Jeong-Gyu Park, Seung-Dong Yang, Ho-Jin Yun, Kwang-Seok Jeong, Yu-Mi Kim, Hi-Deok Lee, Ga-Won Lee, Jae-Sub Oh, Performance Study on a Tri-Gate SONOS Flash Memory with Gate Stack Engineering Journal of the Korean Physical Society. ,vol. 58, pp. 1407- 1410 ,(2011) , 10.3938/JKPS.58.1407