Control of stress in highly doped polysilicon multi-layer diaphragm structure
作者： Longqing Chen , Jianmin Miao , Lihui Guo , Rongming Lin
DOI: 10.1016/S0257-8972(01)01163-X
关键词:
摘要: Polysilicon films can be used as stress regulating (or compensating) to achieve zero resultant or low tensile in a multi-layer diaphragm structure. Influence of LPCVD deposition condition, substrate, film thickness, crystallized degree and pre-annealing on residual polysilicon was studied. The deposited PSG substrate shows the lowest stress. relationship between thickness investigated with aid Raman Scattering Spectrometry. significant dependence because raises thickness. test results show that: (1) for thinner (0.20 μm), even if higher temperature is (630°C), its still quite film; (2) thicker (4 an amorphous (580°C) used, crystallization will occur as-deposited films. control highly boron doped polysilicon-oxide structure carried out. result that property magnitude stresses arbitrarily changed certain range by varying holding time final annealing.
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