作者: Moe Warasawa , Yousuke Watanabe , Jun Ishida , Yoshitsuna Murata , Shigefusa F. Chichibu
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摘要: Visible-light-transparent p-type NiO films were deposited by reactive RF sputtering under unintentional heating. An optical transmittance of >80% was obtained in the wavelength range 500–800 nm when a very low O2 fraction gas phase O2/(Ar+ O2) = 0.5%. This result may reflect decrease concentration Ni vacancies due to increase their formation energy oxygen-poor deposition conditions. Heterostructure pn junctions consisting and n-type ZnO layers also deposited. We eventually observed slight but noticeable photovoltaic effect.