Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

摘要: The authors report stoichiometry control and postdeposition annealing-free fabrication of Nb-doped transparent anatase TiO2 (A-TiO2:Nb) films on alkaline-free glass substrates by helicon-wave-excited-plasma sputtering. tended to crystallize in the stable electrically semi-insulating rutile phase. However, although appropriate deposition condition window was narrow, precise using near-reducing ambient, namely, temperature higher than 450 °C O2 partial pressure (PO2) range between 5×10−4 1×10−2 Pa, enabled a high refractive index semiconducting electron concentration A-TiO2:Nb increased with increasing Nb up Ti0.907Nb0.093O2. results indicate that Nb5+ donor Ti4+ site can be activated under atmosphere where unwanted compensating defects may passivated. As result, Ti0.907Nb0.093O2 film deposited at 500 °C PO2=5×10−4 Pa exhibited r...