Heteroepitaxial Growth of Rutile TiO2 on GaN(0001) by Pulsed Laser Deposition
作者： Taro Hitosugi , Yasushi Hirose , Junpei Kasai , Yutaka Furubayashi , Makoto Ohtani
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摘要: Rutile TiO2(100) thin films have been grown on GaN(0001) surfaces by using the pulsed laser deposition method. Reflection high-energy electron diffraction (RHEED) measurements during clearly revealed layer-by-layer growth of TiO2 at a substrate temperature 400°C under an oxygen pressure 1×10-5 Torr. X-ray and atomic force microscopy confirmed that obtained high crystallinity with atomically flat surfaces. Pole figure epitaxial relationship between GaN, namely in-plane axis aligns parallel to GaN .
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