Lateral transport properties of Nb-doped rutile- and anatase-TiO2 films epitaxially grown on c-plane GaN
作者： S. F. Chichibu , K. Hazu , T. Ohtomo , T. Nakayama , A. Tanaka
DOI: 10.1063/1.4746406
关键词: Optoelectronics 、 Analytical chemistry 、 Anatase 、 X-ray photoelectron spectroscopy 、 Rutile 、 Niobium 、 Wide-bandgap semiconductor 、 Epitaxy 、 Materials science 、 Electron mobility 、 Heterojunction
摘要: Valence-band offsets for Nb-doped (100) rutile (R-TiO2) epilayer on (0001) GaN and (001) anatase (A-TiO2) mixed with R-TiO2 were determined using x-ray photoelectron spectroscopy to be +0.2 eV +0.6 eV, respectively. Accordingly, they form type-I type-II heterojunctions, The electron mobility as high 260 cm2 V−1 s−1 was measured the A(+R)-TiO2:Nb undoped GaN, which is quantitatively explained in terms of accumulation at interfacial region GaN. intrinsic approximately 30 cm2 V−1 s−1 300 K obtained grown a p-type
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