In situ spectral control of Zn species during helicon-wave-excited-plasma sputtering epitaxy of ZnO
作者： T. Koyama , T. Onuma , SF. Chichibu
DOI: 10.1063/1.1616650
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摘要: Atomic species in the sputtered plumes from undoped ZnO target were identified by means of emission spectroscopy during helicon-wave-excited-plasma sputtering epitaxy. Luminescent Zn found to be excited neutral zinc (Zn*) and cations (Zn+*), Zn* density was independently controlled bias (Vt) that accelerates velocity Ar while keeping plasma constant. The film formation seemed have certain threshold Vt (around −200 V at 600 °C), growth rate increased with magnitude but decreased substrate temperature, indicating is limited sticking coefficient Zn. As a result supply mode similar case for laser molecular-beam epitaxy, epitaxial (0001) on (1120) sapphire had ultra-smooth surfaces having atomically flat terraces, exhibited excitonic reflectance anomalies luminescence peaks low temperature.
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