Structure and properties of tin‐doped indium oxide thin films prepared by reactive electron‐beam evaporation with a zone‐confining arrangement

摘要: The microstructure and electrical properties of tin‐doped indium oxide thin films crystallized under the action a temperature gradient are compared with those prepared uniform temperature. This zone‐confining process, coupled slow deposition rates, causes preferential segregation dopants from grains growing at lower temperatures toward grain boundaries located higher Recrystallization within chain or zone on line equal these to be oriented in same direction. separating twin boundaries. Electronic mean free paths zone‐confined specimens two four times average size grains.