Extraction of free carrier density and mobility from the optical transmission data of tin-doped indium oxide thin films
作者： I.A. Rauf
DOI: 10.1016/0167-577X(95)00008-9
关键词: Indium 、 Thin film 、 Tin 、 Materials science 、 Doping 、 Dopant 、 Interferometry 、 Extraction (chemistry) 、 Analytical chemistry 、 Oxide
摘要: Abstract A method for extracting the free electron density and mobility as well thickness of a semiconducting film from optical transmission data is presented. The tested tin-doped indium oxide thin films prepared with different thicknesses dopant concentrations. Thickness values extracted this agree very closely those measured by interferometric method. Also, samples same concentration exhibit similar carrier but differ
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