作者: Rohit Soni , Paul Meuffels , Adrian Petraru , Mirko Hansen , Martin Ziegler
DOI: 10.1039/C3NR03993E
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摘要: Bipolar switching behaviours of electrochemical metallization (ECM) cells with dual-layer solid electrolytes (SiOx–Ge0.3Se0.7) were analyzed. Type 1 ECM cell, Pt (bottom electrode)/SiOx/Ge0.3Se0.7/Cu (top electrode), exhibited typical eightwise current–voltage (I–V) hysteresis whereas 2 electrode)/Ge0.3Se0.7/SiOx/Cu(top showed counter-eightwise hysteresis. In addition, absolute off-switching voltage in cell is lower than that while on-switching both almost the same. An attempt to understand this electrolyte-stack-sequence-depending polarity reversal was made terms potential change upon electrolyte stack sequence and consequent Cu filament growth direction. Relevant experimental evidence for hypothesis obtained regarding behaviours. Furthermore, given reversal, feasibility serial complementary resistive switches also demonstrated.