Physical origins and suppression of Ag dissolution in GeSx-based ECM cells
作者： Jan van den Hurk , Ann-Christin Dippel , Deok-Yong Cho , Joshua Straquadine , Uwe Breuer
DOI: 10.1039/C4CP01759E
关键词:
摘要: Electrochemical metallisation (ECM) memory cells potentially suffer from limited retention time, which slows down the future commercialisation of this type data memory. In work, we investigate Ag/GeSx/Pt redox-based resistive (ReRAM) with and without an additional Ta barrier layer by time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray absorption spectroscopy (XAS) synchrotron high-energy diffractometry (XRD) to physical mechanism behind shift and/or loss OFF retention. Electrical measurements demonstrate effectiveness high potential diffusion in practical applications.
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