On the Low-Temperature Thermal Conductivity of n-Ge
作者： Katsuo Suzuki , Nobuo Mikoshiba
DOI: 10.1143/JPSJ.31.186
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摘要: The contributions of inelastic and elastic phonon scattering by neutral donors to the low-temperature thermal resistance Ge are calculated in detail. It is shown that mechanisms make almost same contribution Sb-doped Ge. sum both gives a good agreement with experiments.
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