The effect of electrical field of impurity centres and phonon-electron screening in phonon conductivity of III-V semiconductors at low temperatures
作者： M Singh , G S Verma
DOI: 10.1088/0022-3719/7/20/011
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摘要: It is established in the present work that decrease low-temperature phonon conductivity of III-V semiconductors, caused by an introduction impurities with concentration >or approximately=1017cm-3, may be explained Kosarev's mechanism for scattering phonons charge carriers effective electric field impurity centres q>2kF, and a more consistent consideration screening phonon-electron interaction region long-wavelength Ziman as suggested Crosby Grenier (1971).
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