Thermal conductivity of heavily doped p-type InSb down to 0.38K

摘要: The results of lattice thermal conductivity measurements on samples heavily (Cd)-doped p-type InSb, in the temperature range 0.38-4K can be satisfactorily explained if one assumes main scattering phonons as being due to charge carriers but this requires taking into account screening phonon-carrier interaction for long-wavelength and relaxing momentum energy conservation conditions include transfer impurities. empirical fit data is found extend over a remarkably wide doping concentrations, from 1016-1019 cm-3.